MRAM

 


All of our data used to fit on a two-megabyte floppy disk. In today’s society, the volume of information required that we switch to high capacity, low power consumption options. The next generation of storage devices will use magnetoresistive random access memory. (MRAM). 

Scientists at the Advanced Institute for Materials Research (WPI-AIMR) have published a review in the journal Science and Technology of Advanced Materials on November 13, 2024. 

Researchers used a cobalt manganese iron alloy in a thin film. It demonstrated a high perpendicular magnetic anisotrophy (PMA). This is important for creating MRAM devices that use spintronics.

Professor Shigemi Mizikami is from Tohoku University. He reports, “ This is the first time a cobalt manganese iron alloy has strongly shown large PMA. We previously discovered this alloy showed a high tunnel magneto resistance (TMR) effect, but it is rare that an alloy potentially shows both together.”

MRAM use magnetic storage elements and not an electric charge to store data. This gives MRAM huge advantages like reduced power consumption.

Researchers at Tohoku University had investigated the cobalt manganese iron alloys, and found they have high PMA. 

The results of this research will offer new options  for memory materials and help with the development of new spintronic memory devices.

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